| 摘要 |
<p>A semiconductor light emitting device (10) which allows part of an active layer (13) to generate light by supplying current to the part of the active layer (13) is disclosed. The semiconductor light emitting device (10) includes: a semiconductor substrate (11) having upper and lower surface, the upper surface having a stepped portion (11a), the stepped portion (11a) dividing the upper surface into a least a first area and a second area; a current confining layer (20), formed on the upper surface of the substrate (11), the current confining layer (20) being discontinuous at the stepped portion (11a), the current flowing through an area between the first area and the second area of the substrate (11); a multilayer structure (12, 13, 14, 15) formed on the current confining layer (20), the multilayer structure (12, 13, 14, 15) including the active layer (13); a first electrode (17) which covers only part of an upper surface of the multilayer structure (12, 13, 14, 15); and a second electrode (18) formed over the lower surface of the substrate (11). In the semiconductor light emitting device, the light generated from the part of the active layer (13) is extracted to the outside through a portion of the upper surface of the multilayer structure (12, 13, 14, 15) which is not covered with the first electrode (17). <IMAGE></p> |
