发明名称 |
Vertical and lateral isolation for a semiconductor device. |
摘要 |
<p>A method is provided for making a power device (54) and a small signal device (52) on a bonded silicon substrate (41). A first silicon substrate (10) provided. A first surface (17) is etched to form a plurality of cavities (11) with a depth (13). A dielectric layer (14) is created on the first surface (17), wherein the dielectric layer (14) is created with a thickness less than or equal to the depth of the plurality of cavities. The dielectric layer (14) is patterned so that a plurality of islands (22) of dielectric remain in the cavities. A second silicon substrate (42) is provided. The first and the second silicon substrates (10, 42) are bonded together in such a manner that the islands (22) are buried. A predetermined portion of the first silicon substrate (10) is removed, thereby creating a surface that is suitable for semiconductor device fabrication. <IMAGE></p> |
申请公布号 |
EP0559405(A2) |
申请公布日期 |
1993.09.08 |
申请号 |
EP19930301518 |
申请日期 |
1993.03.01 |
申请人 |
MOTOROLA, INC. |
发明人 |
CAMBOU, BERTRAND F.;HUGHES, DONALD L. |
分类号 |
H01L21/761;H01L21/762;H01L21/764 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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