Nonvolatile semiconductor memory device.

摘要

In response to a plurality of address signals input from the outside in sequence, an erase information inputting section (200) controls an rease information holding section (201) corresponding to the batch erase block (203) to be erased so as to hold an erase information data. By repeating this operation in sequence, the erase information data are stored in the erase information holding sections (201) corresponding to the plural batch erase blocks (203) to be erased. Successively, on the basis of the erase information data stored in the erase information holding sections (201), block erasing sections (202) are activated to erase all the nonvolatile memory cells of each of the corresponding blocks where the erase information data are held. As a result, the erasure operation is achieved for all the batch erase blocks (203) corresponding to the erase information holding sections (201) in each of which the erase information data is held, so that a plurality of batch erase blocks (203) can be erased simultaneously, thus reducing the erasure time, as compared with the prior art memory device. <IMAGE>