发明名称 |
Apparatus and method for etching semiconductor wafer. |
摘要 |
<p>A semiconductor wafer etching apparatus capable of anisotropically etching a large-diameter semiconductor wafer with high accuracy without causing the semiconductor wafer to be charged. The semiconductor wafer etching apparatus has a fast atom beam source (4) for generating an electrically neutral fast atom beam of gas atoms or molecules to etch a semiconductor wafer by using the fast atom beam. <IMAGE></p> |
申请公布号 |
EP0559233(A1) |
申请公布日期 |
1993.09.08 |
申请号 |
EP19930103995 |
申请日期 |
1993.03.05 |
申请人 |
EBARA CORPORATION |
发明人 |
SUZUKI, HIDENAO;HATADA, YOSHIO;NISHIMURA, TATSUYA |
分类号 |
H01L21/302;H01J37/02;H01L21/3065;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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