发明名称 |
Photovoltaic device and manufacturing method therefor |
摘要 |
A photovoltaic device, wherein a non-crystalline semiconductor layer of one conductivity type formed on a single crystal or a polycrystalline semiconductor substrate of the opposite conductivity type is annealed thereby to change the non-crystalline semiconductor to a polycrystalline semiconductor, with a pn junction plane formed therebetween. The depth of the junction plane is 500 ANGSTROM or less from the light incident surface of the polycrystallized semiconductor. Moreover, the light incidence surface can be made uneven by increasing the growth rate of the non-crystalline semiconductor.
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申请公布号 |
US5242504(A) |
申请公布日期 |
1993.09.07 |
申请号 |
US19910794424 |
申请日期 |
1991.11.19 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
IWAMOTO, MASAYUKI;MINAMI, KOUJI;YAMAOKI, TOSHIHIKO |
分类号 |
H01L31/04;H01L31/0368;H01L31/068;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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