| 摘要 |
PURPOSE:To contrive the reduction in cost and to simplify the driving circuit by connecting a rectifier element between an n-channel gate and cathode in the positive polarity of the cathode side and connecting a resistor between a p-channel gate and anode. CONSTITUTION:When the impurity density of the semiconductor layer forming an n-channel base region of a pnpn semiconductor element 1 is higher than the impurity density of the semiconductor layer forming the p-channel base region, a rectifier element is connected between the n-channel gate 13 and cathode 10 of the pnpn semiconductor element 1 in the positive polarity of the cathode side and a resistor is connected between the p-channel gate 14 and the anode 9. Moreover, when the impurity density of the semiconductor layer forming the n-channel base region of the pnpn element 1 is lower than the impurity density of the semiconductor layer forming the p-channel base region, the rectifier element is connected between the p-channel gate 14 and the anode 9 of the pnpn semiconductor element 1 in the positive polarity of the p- channel gate and the resistor is connected between the n-channel gate 13 and the cathode 10. Moreover, a power supply 6 and a load resistor 2 are connected in series between the anode 9 and the cathode 10 of the pnpn semiconductor element l. Thus, the circulit is simplified and the cost is reduced. |
