| 摘要 |
<p>A static induction device (SI device) at least shares a structure in which an SI thyristor, an IGT and a capacitor are merged onto the single monolithic chip. The SI thyristor has a cathode (23), an anode (21) and gate regions (31), and a channel (22). The IGT has a well (59) on a surface of the channel, a source (31) and drain (32) regions within the well, a gate insulating film on the well, and a gate electrode (25) on the gate insulating film. The capacitor comprises the gate region (31) of the SI thyristor, the gate insulating film on the gate region, and the gate electrode (25). The cathode and the drain region are connected to each other through a high-conductive electrode (231). <IMAGE></p> |
