发明名称 |
METHOD OF PREPARING OXIDE SUPERCONDUCTING THIN FILM |
摘要 |
Provided herein is a method of efficiently preparing a thin film having a higher critical temperature as to an oxide superconducting material containing T?. A thin film of an oxide containing T? is formed and then heat treated at a temperature of about 850 to 950.degree.C for a short time, and thereafter further heat treated at a temperature, which is lower than the preceding heat treatment temperature, of at least about 750.degree.C for a long time. The thin film is heat treated in an atmosphere having an oxygen partial pressure of not more than about 0.1 atm. In formation of a T? superconducting thin film, on the other hand, a 1212 phase layer is reacted with an amorphous Ca-Cu-O layer to form a 1223 phase layer, or a layer containing volatile metal elements (T?, Bi and Pb, for example) and oxygen is reacted with another layer containing other elements than the volatile metal elements to form a superconducting film having a high critical temperature.
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申请公布号 |
CA2091023(A1) |
申请公布日期 |
1993.09.07 |
申请号 |
CA19932091023 |
申请日期 |
1993.03.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TORII, YASUKO;HASEGAWA, KATSUYA;TAKEI, HIROMI |
分类号 |
H01L39/24;(IPC1-7):H01L39/12;B05D3/00;B05D7/24 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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