| 发明名称 |
Programmable interconnect device and method of manufacturing same |
| 摘要 |
A programmable interconnect device particularly suitable for field programmable ROM, field programmable gate array and field programmable microprocessor code, includes an intrinsic polycrystalline antifuse dielectric layer.
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| 申请公布号 |
US5242851(A) |
申请公布日期 |
1993.09.07 |
| 申请号 |
US19910730419 |
申请日期 |
1991.07.16 |
| 申请人 |
SAMSUNG SEMICONDUCTOR, INC. |
发明人 |
CHOI, KYU H. |
| 分类号 |
H01L21/82;H01L21/768;H01L21/8246;H01L23/525 |
主分类号 |
H01L21/82 |
| 代理机构 |
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