发明名称 |
Semiconductor device for generating an electron current |
摘要 |
The efficiency of semiconductor cathodes based on avalanche breakdown is enhanced by using " delta -doping" structures. The quantization effects introduced thereby decrease the effective work function. A typical cathode structure has an n-type semiconductor region and a first p-type semiconductor region, with the n-type region having a thickness of at most 4 nanometers.
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申请公布号 |
US5243197(A) |
申请公布日期 |
1993.09.07 |
申请号 |
US19920970437 |
申请日期 |
1992.11.02 |
申请人 |
U.S. PHILIPS CORP. |
发明人 |
VAN GORKOM, GERARDUS G. P.;VAN GORKUM, AART A.;VAN DE WALLE, GERJAN F. A.;VAN DER HEIDE, PETRUS A. M.;HOEBERECHTS, ARTHUR M. E. |
分类号 |
H01J1/308 |
主分类号 |
H01J1/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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