发明名称 Semiconductor device for generating an electron current
摘要 The efficiency of semiconductor cathodes based on avalanche breakdown is enhanced by using " delta -doping" structures. The quantization effects introduced thereby decrease the effective work function. A typical cathode structure has an n-type semiconductor region and a first p-type semiconductor region, with the n-type region having a thickness of at most 4 nanometers.
申请公布号 US5243197(A) 申请公布日期 1993.09.07
申请号 US19920970437 申请日期 1992.11.02
申请人 U.S. PHILIPS CORP. 发明人 VAN GORKOM, GERARDUS G. P.;VAN GORKUM, AART A.;VAN DE WALLE, GERJAN F. A.;VAN DER HEIDE, PETRUS A. M.;HOEBERECHTS, ARTHUR M. E.
分类号 H01J1/308 主分类号 H01J1/308
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