MANUFACTURING METHOD OF LIGHTLY DOPED DRAIN DEVICE

摘要

The method for doping the impurity from a polysilicon to a silicon side comprises steps: (a) forming a field oxide, buffer oxide, and nitride layers and patterning the nitride layer; (b) wet etching the buffer oxide layer; (c) forming an undoped polysilicon layer after removing the nitride layer; (d) patterning and anealing the undoped polysilicon layer; (e) forming an in-situ doped polysilicon layer and etching it anisotropically to form the side wall; (f) forming a gate oxide layer and gate polysilicon in sequence; and (g) forming the gate by patterning the gate polysilicon.