| 摘要 |
PURPOSE:To provide a low cost photoelectric conversion device (such as solar cell) which is excellent in conversion efficiency and high in reliability. CONSTITUTION:A substrate 1 is carried over to a rear side electrode formation chamber 10, a photoelectric conversion film formation chamber 2, a surface electrode formation chamber 12 and a substrate bringing out chamber 12 one after another from a substrate bringing in chamber 9. In the rear side electrode formation chamber 10, there is produced a film of 1000Angstrom by adopting a TiO2 ingot, for example. In the photoelectric conversion film formation chamber 2, N type and P type silicon-made photoelectric films are produced by using a high temperature plasma torch where the temperature of the films is controlled so as to keep 1000 deg.C constantly during the film formation time. In this manner, it is possible to obtain a photoelectric conversion device which is excellent in conversion efficiency and high reliability by forming (or annealing) the photoelectric conversion film by means of the high temperature plasma. |
