ANALYSIS OF IMPURITY ON SURFACE OF SEMICONDUCTOR SILICON SUBSTRATE,申请号JP19920029832-传众专利搜索

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发明名称	ANALYSIS OF IMPURITY ON SURFACE OF SEMICONDUCTOR SILICON SUBSTRATE
摘要
申请公布号	JPH05226443(A)	申请公布日期	1993.09.03
申请号	JP19920029832	申请日期	1992.02.18
申请人	NEC CORP	发明人	WATANABE KAORI
分类号	G01N21/00;G01N21/31;H01L21/66	主分类号	G01N21/00
代理机构		代理人
主权项
地址

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