| 摘要 |
PURPOSE: To damage a porous silicon to a lesser degree than in plasma deposition of silicon dioxide by depositing silicon dioxide on a surface of a silicon wafer by sputtering in an inert atmosphere at a room temperature, prior to a recovery process of light emission wherein the silicon wafer is exposed in an inert atmosphere. CONSTITUTION: A p-type silicon is coated with a photoresist, and a n<+> -layer is implanted through the photoresist. After the implantation the photoresist is removed, and the silicon is annealed, and an n<+> -well is formed in the p-type silicon wafer. At the same time, the silicon wafer has porous structure by electrochemical etching, successively isotropic etching is performed. Next the surface is coated with a silicon dioxide layer by sputtering, and a device is patterned by photoresist to form various elements of active devices, and the overall device is then placed in a hydrogen plasma. The hydrogen plasma reaches the porous silicon through a protective oxide layer and makes the surface inert and recovers light emission. |
