| 摘要 |
PURPOSE:To materialize a capacitor having a large accumulation of charge by forming a charge accumulation layer by utilizing an unevenness of a pattern edge due to the interference of incident and reflected exposure lights. CONSTITUTION:Photo resist is applied onto the surface of a silicon substrate 101 having a base structure and is prebaked and patterned. Due to the interference of cast or reflected exposure light, a resist film 111 has such a pattern edge as to have a first uneven surface 112. Nextly, an SOG film 113, an intermediate insulating film, is applied to the whole surface and is baked and etched to expose the surface of the resist film 111. Then, a second uneven surface 114 is transferred to the SOG film 113. And, the resist film 111 is removed and the SOG film 113 is solidified by baking. Then, by depositing polycrystalline silicon on the whole surface by CVD and then by patterning it, a charge accumulation layer 115 which has a larger surface area and has A fourth uneven surface 117 corresponding to a third uneven surface 116 formed by transferring the second uneven surface. |
