| 摘要 |
PURPOSE:To provide a quantum wire where a channel interface is flat and carriers scatter is less, and its manufacturing method. CONSTITUTION:After an etching protection film 21 is formed on a silicon substrate 10, anisotropic etching of crystal is performed, thus forming a protrusion 2 with a triangular section. Then, the silicon substrate 10 is oxidized, thus forming an oxide film layer 27. The above process forms a wire channel 1 which is insulated and separated from the silicon substrate 10 on vertices of the protrusions 2. |
