| 摘要 |
PURPOSE:To make it possible to prevent a punch through and to increase the capacity of a capacitor. CONSTITUTION:Firstly, a dent for element isolation and a dent for transistor formation are formed simultaneously and the dent for transistor formation is so formed that a gate electrode 5 may be inserted into. Secondly, a pad electrode 10p constituted of a conductor layer which was formed in one and the same process as a storage node electrode 10 was formed is placed between a bit line 14 and a source and a drain region 6a and 6b, to which the bit line 14 is connected. And, thirdly, the storage node electrodes are located checkerwise. |
