| 摘要 |
PURPOSE:To obtain a II-VI compound semiconductor in which nitrogen and phosphorus are sufficiently added by conducting a high frequency thermal decomposition of triphosphorus pentanitride in vacuum when the semiconductor is formed, accompanied by its application to a substrate, or conducting the decomposition in a hydrogen atmosphere, and transporting it. CONSTITUTION:In the case of growing a zinc selenide thin film by simultaneously irradiating a substrate 13a with a zinc molecule beam 14c and a selenium molecule beam 15c in an ultrahigh vacuum, the board is simultaneously irradiated with a molecule beam 16c obtained by conducting a high frequency thermal decomposition of triphosphorus pentanitride as p-type impurity, thereby manufacturing the zinc selenide thin film exhibiting p-type conductivity. Thus, a p-type conductivity semiconductor can be realized. Further, a p-n junction light emitting element having a high efficiency can be realized. |
