| 摘要 |
PURPOSE:To prevent the generation of a display defect by short circuiting by forming a light shielding mask of an oxide film formed by anodizing a metallic film under the conditions under which the metallic film is colored to a dark color over the entire thickness thereof. CONSTITUTION:The light shielding mask 20 to be provided on the substrate (TFT substrate) 1 formed with picture element electrodes 3 and thin-film transistors (TFTs) 4 of a pair of transparent substrates 1, 2 facing each other via a liquid crystal layer LC is formed of the oxide film formed by anodizing the metallic film under the conditions under which the metallic film is colored to the dark color over the entire thickness thereof. This light shielding mask 20 is formed on the picture element electrodes 3, the TFTs 4 and a transparent overcoat insulating film (SiN film, etc.) covering data line. The light shielding mask 20 is formed to a grid shape corresponding to the spacings between the rows and columns of the respective picture element electrodes 3, 3 in the same manner as with the conventional light shielding masks. The light shielding mask 10 has an insulating characteristic in such a case and the electrical short circuiting of the transparent electrodes 3, etc., on the substrate 1 provided with the light shielding mask with the light shielding mask 20 does not arise. |
