| 摘要 |
PURPOSE:To enable a multilayer wiring interlayer insulating film to be formed at a low temperature and falttened through an etching-back process so as to obtain a multilayer wiring structure excellent in reliability by a method wherein a fluorine-containing silicon oxide film is used as a part of an interlayer insulating film. CONSTITUTION:A first silicon oxide film 404 is formed on a semiconductor substrate 401 provided with a first aluminum wiring 403 where a glass film 402 is formed. Thereafter, a fluorine-containing silicon oxide film 405 is formed thick at temperature of 200 deg.C or below. After a photoresist film 406 is formed, the photoresist film 406 and the fluorine-containing silicon oxide film 405 are etched back under such conditions that the etching rate of the photoresist film 406 to the fluorine-containing silicon oxide film 405 is set to 1:2. A through-hole 408 is formed at a prescribed point, and then a second aluminum wiring 409 is formed. By this setup, a multilayer wiring structure can be formed completely free front disconnection or short, circuits when an upper wiring is formed and enhanced in reliability of moisture resistance. |
