| 摘要 |
PURPOSE:To reduce the size of a memory cell without using the metal interconnection processing technology by making a pitch of a metal interconnection which passes on the memory cell larger than that of a word line. CONSTITUTION:A word line is divided to such an extent that no notice should be taken of a wiring delay due to a resistance of the word line even if the word line is not backed with a metal interconnection. Then, word line driving circuits 3a-5d, each of which is constituted of the minimum necessary circuits to drive the word line, are connected to the divided word lines respectively. A word line is selected by metal interconnections XSWO-2, XSWO-2 which run on a memory cell parallelly with the word line at a pitch twice the word line or larger and metal interconnections RAO-3 which run on the word line driving circuit vertically with the word line. |
