| 摘要 |
PURPOSE:To improve a current diffusivity to a p-n junction and enable a light emitting element to make high luminance variation even if an upper electrode provided on a surface of a light emitting element and the junction are approached to 20mum or less by providing a current diffused layer having a carrier concentration of 5X10<17>cm<-3> or more directly under the electrode. CONSTITUTION:An n-type GaInP layer 11 and a p-type GaInP layer 12 are sequentially epitaxially grown on an n-type GaAsP substrate 10. The junction of both the layers become a p-n junction 2, and the layer 12 is reduced in thickness. Then, a GaInP layer 14 having a carrier concentration of 1X10<19>cm<-3> is provided as a current diffused layer on the layer 12 by an ordinary liquid growth method to form a light emitting element chip. After an electrode material made of AuBe is vacuum vapor-deposited on the surface 13 of the chip, it is patterned and annealed to form a circular electrode at a central part of the surface 13 of the chip. Then, after the rear of the chip is covered with a lower electrode made of AuSn, it is subjected to dicing. |
