| 摘要 |
PURPOSE: To provide a method of substantially increasing an electrical activity and electron mobility in a compound semiconductor material of III-V group, containing traces of oxygen, and a product obtained by the method. CONSTITUTION: A compound crystal material of III-V group is doped with an n-type dopant and an element reacting to a bit of oxygen and having sufficient effects to this increase is added or injected to the compound material of III-V group. The respective volumes of these must be less than about 1×10<13> cm<-2> and 4.5×10<12> cm<-2> . The volume of an element added to or injected into and reacted with oxygen is preferably smaller than the volume of the n-type dopant. According to experimental data, the element added to or injected into and reacted with oxygen functions as a gettering material, and a depletion region is formed between the dopant region and the element region reacting to oxygen.
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