发明名称 |
BIPOLAR JUNCTION TRANSISTOR EXHIBITING SUPPRESSED KIRK EFFECT |
摘要 |
A bipolar junction transistor (BJT) which exhibits a suppressed Kirk Effect comprises a lightly-doped n-type collector region (11) formed above a more heavily-doped n+ layer (12). Directly above the collector is a p-type base which has an extrinsic region (17) disposed laterally about an intrinsic region (18). An n+ emitter (20) is positioned directly above the intrinsic base region. The BJT also includes a localized n+ region (15) disposed directly beneath the intrinsic base region which significantly increases the current handling capabilities of the transistor. |
申请公布号 |
WO9317461(A1) |
申请公布日期 |
1993.09.02 |
申请号 |
WO1993US01203 |
申请日期 |
1993.02.10 |
申请人 |
MICROUNITY SYSTEMS ENGINEERING, INC. |
发明人 |
MATTHEWS, JAMES, A. |
分类号 |
H01L29/73;H01L21/331;H01L21/8249;H01L29/08;H01L29/732 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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