| 摘要 |
<p>An improved method of patterning layers on a semiconductor element by use of laser processing. A thin film of amorphous silicon (12) is deposited on a fused quartz window (10). Selected regions of the amorphous silicon are crystallized by a laser beam (20) focused through the quartz window. Non-crystallized silicon is removed forming an opaque layer of crystallized silicon in the desired pattern (14). The quartz window (10) is used as a window to a reactive gas containment chamber (30) containing semiconductor devices (40) to be patterned. By irradiating the chamber with ultraviolet light (24) through the patterned quartz window, the semiconductor element is etched in the regions exposed to the light.</p> |
