Liq. phase epitaxy appts. - comprises several walls enclosing melt and boundary wall bordering growing plane
摘要
Liq. phase epitaxy appts. comprises several walls to enclose a melt, in which is dissolved the material to be grown on a substrate (16) in a growing plane (18). There is a boundary wall (11) that borders the growing plane at a start or at right angles. The novelty is that at least one slot (19.1) is located in the boundary wall (11) at a distance from the boundary line (17) between the growing plane and the boundary wall. USE - The appts. is used to grow thin layers on a substrate.
申请公布号
DE4206373(A1)
申请公布日期
1993.09.02
申请号
DE19924206373
申请日期
1992.02.29
申请人
TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 7100 HEILBRONN, DE