发明名称 Liq. phase epitaxy appts. - comprises several walls enclosing melt and boundary wall bordering growing plane
摘要 Liq. phase epitaxy appts. comprises several walls to enclose a melt, in which is dissolved the material to be grown on a substrate (16) in a growing plane (18). There is a boundary wall (11) that borders the growing plane at a start or at right angles. The novelty is that at least one slot (19.1) is located in the boundary wall (11) at a distance from the boundary line (17) between the growing plane and the boundary wall. USE - The appts. is used to grow thin layers on a substrate.
申请公布号 DE4206373(A1) 申请公布日期 1993.09.02
申请号 DE19924206373 申请日期 1992.02.29
申请人 TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 7100 HEILBRONN, DE 发明人 BOMMER, ULRICH, DIPL.-ING., 7519 EPPINGEN, DE
分类号 C30B19/06 主分类号 C30B19/06
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