摘要 |
Process comprises enriching surface with Ta and/or Nb ions during etching, and application of a hard material layer to at least one part or substrate, partic. a hard material layer consisting of at least one of TiM, TiCN, ZrN, ZrCN, HfN, HfCN, TiAlN, TiAlCN, TiZrN, TiZrCN, TiNbN, TiNbCN, CrN, and CrCN. The enrichment of the substrate surface by etching with the arc method in the highly ionized metal vapour of Ta and Nb.
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申请人 |
HAUZER HOLDING B.V., VENLO, NL |
发明人 |
MUENZ, WOLF-DIETER, DR., VENLO, NL |