| 摘要 |
<p>An SOI-type semiconductor device having a semiconductor film (15) of a reduced thickness formed on an insulating film (12). The SOI-type semiconductor device has a semiconductor substrate (11), the insulating film (12) that has recessed portions (13a, 13b) and that is formed on the semiconductor substrate (11), and electrically conductive members (14a, 14b) buried in the recessed portions (13a, 13b). The device further has the semiconductor film (15) formed on the insulating film (12) and impurity regions (16) that are formed in the semiconductor film (15) and that are electrically connected to the electrically conductive members (14a, 14b).</p> |
