Article comprising a real space transfer semiconductor device, and method of making the article.

摘要

Real space transfer (RST) semiconductor devices of novel geometry are disclosed. The devices are processed such that, at least in the active region of the devices, bulk semiconductor material is removed, and such that both the channel length Lch and the collector width W are defined lithographically. The channel length is defined by a trench (61) etched through a highly conductive emitter contact layer (13). The trench is situated directly opposite the collector (16). Devices according to the invention can have relatively small parasitic capacitance, and therefore are potentially fast. A processing method that can be used to make devices of the novel geometry is also disclosed.