发明名称 |
Semiconductor memory device with address transition detector. |
摘要 |
<p>A semiconductor memory device with an address transition detector comprises a flip-flop circuit (FF) having set and reset input terminals and a delay circuit (3). A pulse signal is input to a set input terminal (S) of the flip-flop circuit (FF) and an output signal (P) of the flip-flop circuit (FF) is input through the delay circuit (3) to a reset terminal (R) of the flip-flop circuit (FF), whereby a constant width signal which is independent of a waveform of an address signal and which responds only to the change of address can be obtained as an address transition signal of a SRAM (static random access memory). An internal circuit of the SRAM is initialized by the constant width signal, thereby preventing a malfunction caused by the fact that an initialization time depends on the waveform of the address signal. <IMAGE></p> |
申请公布号 |
EP0558079(A2) |
申请公布日期 |
1993.09.01 |
申请号 |
EP19930103145 |
申请日期 |
1993.02.26 |
申请人 |
SONY CORPORATION |
发明人 |
NAKASHIMA, KATSUYA, SONY CORPORATION;KOHRI, SHUMPEI, SONY CORPORATION;NAKAGAWARA, AKIRA, SONY CORPORATION |
分类号 |
G11C8/18;(IPC1-7):G11C8/00 |
主分类号 |
G11C8/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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