| 摘要 |
PURPOSE:To enable the exhibition of initial expected good characteristics even under the irradiation of electron rays or radiations by a melted wherein the titled device is so constructed that an insulation film has the energy band gap decreasing from the semiconductor substrate side toward the opposite side. CONSTITUTION:Electron-hole pairs generate in the insulation film 2 on irradiation with electron rays or radiations. In this case, if the voltage impressed across the semiconductor substrate 1 and a conductive layer 3 is polarity whereby the conductive layer side is positive, the energy band gap of the insulation film changes from the stage of Fig. A to the state of altered inclination as shown in Fig. B. If the impresed voltage is of polarity whereby the layer side is negative, the energy band gap changes from the state of Fig. A to the state of altered inclination as shown in Fig. C. However, such changes are not made in directions wherein both electrons and holes are easy in transfer to the substrate side, whether the impressed voltage turns the layer side to the positive polarity or to the negative polarity. Therefore, this device is not damaged even under the irradiation with electron rays or radiations. |
