| 摘要 |
A diffused layer is formed in a semiconductor substrate in a connecting region wherein a word line and a shunt thereof are connected to each other, and the word line is also connected to the diffused layer. A junction breakdown voltage between the diffused layer and the semiconductor substrate is not higher than the breakdown voltage of a gate insulating film and is not lower than a maximum voltage applied during a burn-in operation. For this reason, charges accumulated in the word line during a wafer process are easily discharged to the semiconductor substrate through the diffused layer. In addition, since the diffused layer connected to the word line is formed in the connecting region wherein the word line and the shunt thereof are connected to each other, an additional region for the diffused layer is not required. Therefore, variations in characteristics of a transistor, or degradation and breakdown of the gate insulating film can be prevented without a decrease in integration density.
|
