发明名称 |
Method for forming a semiconductor device |
摘要 |
The surface area of a polysilicon electrode is increased by sputtering non-coalescing islands (20) of aluminum onto a silicon dioxide layer (18), which is overlying the polysilicon electrode. The sputtering process allows uniform island formation to be achieved independent of the deposition surface. The non-coalescing islands are then used as a mask, and a portion of the buffer layer (22) and a portion of the polysilicon electrode (26) are etched to form pillar-like regions (30) within the polysilicon electrode.
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申请公布号 |
US5240558(A) |
申请公布日期 |
1993.08.31 |
申请号 |
US19920967294 |
申请日期 |
1992.10.27 |
申请人 |
MOTOROLA, INC. |
发明人 |
KAWASAKI, HISAO;SHARMA, UMESH;KIRSCH, HOWARD C. |
分类号 |
H01L21/02;H01L21/033;H01L21/311;H01L21/8242 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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