Metal-ferroelectric-semiconductor type non-volatile memory cell.

摘要

The invention relates to a non-volatile memory cell with at least one metal-ferroelectric-semiconductor transistor comprising a source (5), a drain (6) and a gate (4), the gate being insulated from the source and from the drain by a ferroelectric layer (2). The transistors of such a memory cell each include a lateral programming electrode (BL) in contact with a vertical wall of the ferroelectric layer and insulated from the gate and they also include, advantageously, a dielectric layer (7) between the ferroelectric and semiconductor layers (1). Application to static memories. <IMAGE>