| 摘要 |
<p>A compound semiconductor device including a substrate; a first epitaxial layer formed on the substrate, the first epitaxial layer having an impurity concentration of 1 x 10<1><5> </= p </= 1 x 10<1><6> (cm<-><3>); and a second epitaxial layer formed on the first epitaxial layer for allowing travel of two-dimensional electrons, the second epitaxial layer having an impurity concentration of n </= 1 x 10<1><4> (cm<-><3>) and p </= 1 x 10<1><4> (cm<-><3>). Accordingly, a short channel effect due to a reduction in gate length is hard to occur, thereby ensuring high characteristics of the compound semiconductor device. <IMAGE></p> |
