发明名称 |
Semiconductor device having an interconnected film with tapered edge |
摘要 |
A semiconductor device comprises an element separating insulation film formed on a main surface of a silicon substrate, an insulation film formed to project from the edge portion of the element separating insulation film onto a part of a silicon region of the substrate and having a thickness smaller than the thickness of the element separating insulation film, a first metal silicide film formed to cover the element separating insulation film and the thin insulation film in the vicinity of the edge portion of the element separating insulation film, a second metal silicide film formed on the silicon region in the vicinity of the thin insulation film, and a third metal silicide film formed in the vicinity of the tip portion of the thin insulation film for connecting the first and and second metal silicide films. |
申请公布号 |
US5241207(A) |
申请公布日期 |
1993.08.31 |
申请号 |
US19920878418 |
申请日期 |
1992.05.04 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TOYOSHIMA, YOSHIAKI;SHINAGAWA, HIROHUMI;HAYASHIDA, HIROYUKI |
分类号 |
H01L21/28;H01L21/336;H01L21/768;H01L21/8238;H01L23/522;H01L23/528;H01L23/532;H01L27/092;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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