| 摘要 |
PURPOSE:To improve the step coverage in a contact area in a peripheral circuit, ensure the breakdown strength between a gate electrode and a storage node in each memory cell, and thus improve the data storage characteristic without increasing a number of dynamic RAM manufacturing processes. CONSTITUTION:After the formation of an MOS transistor, a SiN film (highly dense insulating film) 7 is formed; subsequently, a storage node 11 is formed on the SiN film 7. Exposed portion of the SiN film 7 uncovered by the storage node 11, is removed. Thus, in patterning a layer insulating film between a third layer polycide film and a fourth layer polycide film, the SiN 7 acts as an etching stopper and a layer insulating film between a first layer polycide film and a second layer polycide film. Further, hydrogen diffusion is not prevented because of partial removal. |
