| 摘要 |
<p>PURPOSE:To prevent the generation of domains and the influence of capacity coupling without increasing the spacings between the gate bus lines and display electrodes of the thin-film transistor(TFT) matrix. CONSTITUTION:This TFT matrix consists of the plural TFTs 20, the gate bus lines 32 connecting the gate electrodes 22 of the TFTs, drain bus lines 34 connecting the drain electrodes of the TFTs, display electrodes 28 respectively connected to the source electrodes 26 of the TFTs 20 and conductive thin films 42 provided to be superposed via insulating layers on at least a part of the gate bus lines 32. The matrix is constituted so as to control the potential of the conductive thin films 42 to a prescribed value.</p> |
