| 摘要 |
<p>PURPOSE:To obtain a semiconductor device in which NMOS and PMOS transistors are electrically isolated from each other by epitaxially growing a monocrystal semiconductor on a porous base and forming a dielectric layer by ion implantation. CONSTITUTION:In an active layer 2 of a PMOS transistor, an n-type channel section 24, a p-type drain region 25 and a source region 26 are formed. In an active layer 12 of an NMOS transistor, a p-type channel region 27, an n<+>-type drain region 28 and a source region 29 are formed. Second gates of the PMOS and NMOS transistors are doped to form an n-type semiconductor and a p-type semiconductor, respectively. The second gates 1 and 11 and the active layers 2 and 12 are made of a monocrystal Si thin-film. A monocrystal Si thin-film between the transistors is oxidized to SiO2 which acts as a dielectric layer by the LOCOS oxidation method. Other areas are simultaneously subjected to the doping of Si when ions are implanted into the second gates. Accordingly, first and second gate connecting sections 6 and 16 are located near to the transistors, whereby excessive interconnections are hardly produced. Hence, the first and second gates can be controlled simultaneously.</p> |
