| 摘要 |
PURPOSE:To enhance light emission efficiency thereby to reduce threshold current, by preventing the impurity diffusion from the buried layer to the active layer in a mesa stripe type semiconductor light emitting device of a buried structure. CONSTITUTION:In a semiconductor light emitting device comprising a mesa 5 wherein a lower clad layer 2 of a first conductivity type, an active layer 3, and an upper clad layer 4 of a second conductivity type, which are sequentially deposited on a substrate 1 of the first conductivity type, are formed in stripes, a buried layer 7 of the second conductivity type for burying the outside of the mesa 5, a contact layer 9 of the second conductivity type deposited on the mesa 5, and electrodes 10 and 11 formed on the rear of the substrate 1 and on the surface of the contact layer 9, provided between the side wall of the mesa 5 and the buried layer 7 is a diffusion barrier layer 6 made of an n-type conductivity type or impurity-free semiconductor and having a forbidden band width which is the same as or greater than either the lower clad layer 2 or the upper clad layer 4. |
