| 摘要 |
PURPOSE:To improve activation ratio of impurity atom doped to a compound semiconductor crystal. CONSTITUTION:A ZnSe crystal 1 is doped with 0 atom, for example, at high concentration as p-type impurities to make at least a part thereof exist in an interstitial position. Then, atomic vacancy is formed in at least an Se atom position by irradiating electronic beam 2 to the ZnSe crystal 1. Thereafter, at least a part of 0 atom existing in the interstitial position is put in the atomic vacancy for activation. |
