| 摘要 |
PURPOSE:To improve the manufacturing accuracy by forming a floating electrode capacitor buried in a trench and providing a direct contact, between a first polysilicon electrode layer and one active region of a first access transistor, on a sidewall of the trench through a contact window in an insulating layer by self-alignment. CONSTITUTION:A first and second access transistors and a trench of a specified depth, are formed on a semiconductor substrate 7. A floating electrode capacitor is formed in the region including the inside of the trench by filling it with an insulating layer 9, first polysilicon electrode layer 5a, dielectric layer 10, and second polysilicon electrode layer 5b in this order. A sidewall of the trench is provided, through a contact window in the insulating layer 9 by self-alignment, with a direct contact between the first polysilicon electrode layer 5a and one active region of the first access transistor. Additionally, a laminated contact 6b is provided, outside the trench through a conductive layer 8, between the second electrode layer 5b and one active region of the second access transistor. |
