| 摘要 |
PURPOSE: To improve working precision of a metal wiring layer by arranging a capacitor constituted of a storage electrode, a dielectric layer and a plate electrode between a primary metal wiring formed on a bit line and a final metal wiring. CONSTITUTION: After circuit elements have been formed on a silicon substrate, a bit line connection is opened, a polysilicon plug is formed, a bit line 7 connected with the plug is formed, and a primary metal wiring 12 is formed above the bit line. Further above the wiring 12, a dielectric layer 10 is formed on a storage electrode 9 surface, plate polysilicon is deposited and flattened, thereon an insulating layer 84 is deposited, and further a second metal wiring 17 is formed. By using the difference in heights of embedded contacts, effective area is increased. Since a capacitor electrode 9 is formed after the primary metal wiring 12 has been formed, difference in heights between a memory cell and the peripheral circuit part can be reduced. As a result, precision of all elements can be improved, including the primary metal wiring 12. |
