| 摘要 |
PURPOSE: To enable a rapid anisotropic etching by forming an Si-Br compound layer on a sidewall of a recessed section, for protecting the sidewall from a transverse etching and giving a shock by ions at the bottom of the recessed section to suppress the formation of an Si-Br compound layer on the bottom of the recessed section. CONSTITUTION: A silicon-included material 1 is covered with a mask 2 for pattern formation, with only an etching region being exposed. Then, a plasma discharging is started in the gas near the silicon-included material 1 to form an Si-Br compound layer 4 on a sidewall of a recessed section, formed in the etching region to protect the sidewall from being etched and to give a shock 5 by ions caused by the plasma discharging on the bottom face 3 of the recessed section for preventing the formation of an Si-Br compound layer on the bottom face, thereby advancing a vertical etching. By this method, the sidewall can be protected from a transverse etching and a superior anisotropic etching without undercuts can be made.
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