| 摘要 |
The method for fabricathing the overvoltage prevention circuit with buried type transistors comprises, forming a n+ layer (13) surrounded by n-well region (12), forming a field oxide (15) layer between the n+ layer and the gate (14), and forming a buried n-type channel (16) between the input n+ layer and the output n+ layer (13). Gate oxide layer is formed between the n-type channel and the gate. Similarly, p-type depletion transistor is formed only with the opposite type of impurities.
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