| 摘要 |
<p>PURPOSE:To obtain a desired pattern without undercuts of vertical shape by forming a chromium or titanium film to be a mask on the upper face of a tungsten layer and an indium tin oxide or aluminium oxide film on the lower face thereof. CONSTITUTION:An Sic film 2 is formed as a membrane on an Si substrate 1 and is provided with desired slits to obtain a product. Indium tin oxide 3, tungsten 4 and chromium 5 are deposited on the product by sputtering. EB resist 6 is applied there, prebaked, EB exposed and developed by dipping to obtain a resist pattern. The chromium 5 is dry etched using a gas mixture of Cl2 and O2; the tungsten 4 is dry etched using a gas mixture of SF6 and CHF6. This enables etching excellent in selectivity and obtains rectangular X-ray absorber patterns.</p> |
