| 摘要 |
PURPOSE: To realize a memory cell of a fine structure by forming a first trench in an element isolation region except an active region, forming a second trench deeper than the first trench in the element isolation region with which the trench is in contact with the end portion of the active region, embedding a capacitor in the second trench, and forming a conducting film surrounded by insulating films, in the element isolation region other than the capacitor. CONSTITUTION: In an element isolation region other than an active region 1 of a semiconductor substrate 100 where a transistor is formed, a first trench having a specific depth is formed. In the element isolation region, a second trench 2 which is deeper than the first trench and in contact with the end portion of the active region 1 is formed. A capacitor is embedded in the second trench 2. A conducting film 111 surrounded by insulating films 101, 102 is formed in the element isolation region other than the capacitor. The transistor is provided with a gate electrode 3 and source/drain regions 170 on the surface regions of the semiconductor substrate 100 on both sides of the gate electrode 3, and connected with an electrode of the capacitor. Thereby a memory cell is made fine, and irregularities in contact resistance can be prevented. |
