MANUFACTURE OF SELF-ALIGNED CONTACT AND VERTICAL INTERBONDED PART WITH REFERENCE TO INTEGRATED CIRCUIT AND DEVICE FORMED BY SAID MANUFACTURE

摘要

PURPOSE: To provide a vertical mutually bonding method of self-alignment useful for manufacture of a multilevel conductor(MLC) integrated circuit, which operates so as to eliminate the limit of a maximum mounting density which can be attained by the method of prior art. CONSTITUTION: A semiconductor substrate is provided inside a device by a method for forming vertical electric mutual bonding parts 52, 54 in an integrated circuit structure, wherein embedded capacitors 26, 28 are formed in a dielectric layer 30 positioned on a silicon substrate 10 having an active or passive device 14 formed on the inside. The method consists of processes wherein the dielectric layer 30 is formed on the substrate, the end portion is exposed to light by opening a path, the edge part is insulated, etching treatment is performed, paths are opened in the capacitors 26, 28, and a connection part is formed in each of the paths.