| 摘要 |
PURPOSE:To produce a light emitting element fine and high in emission efficiency by a method wherein a lower semiconductor layer and an upper semiconductor layer different from each other in conductivity type are provided in belt onto a semiconductor substrate, the upper semiconductor layer is separated into island-shaped pieces, and an electrode is provided to each of the separated semiconductor layers. CONSTITUTION:A buffer layer 2 containing certain conductivity type impurity, a first semiconductor layer 3, a second semiconductor layer 4, and a third semiconductor layer 5 are formed on a semiconductor substrate 1. A first ohmic contact layer 6 which contains a large amount of opposite conductivity type impurity is formed on the third semiconductor layer 5. The buffer layer 2 and the first semiconductor layer 3 out of the semiconductor layers 2-6 are made to serve as a lower semiconductor layer A, and the second semiconductor layer 4, the third semiconductor layer 5, and the first ohmic contact layer 6 are made to serve as an upper semiconductor layer B. A region of the semiconductor layers 2-6 where a light emitting element is formed is formed into a belt, and only the upper semiconductor layer B is formed and separated into islands. An upper electrode 8 is formed on a contact hole 7a. |
