| 摘要 |
PURPOSE: To provide a CCD image sensor which obtains a suitable lateral separation between cells, provides a route for transferring electric charges from a gate electrode to a substrate, and obtains a large integration level with a surface area occupied by cells which are at a minimum. CONSTITUTION: A virtual phase image sensor has a first conductive-type semiconductor substrate 20, a second conductive-type buried channel 22 disposed on the substrate 20, a first conductive-type virtual gate 24 disposed on the buried channel 22, and at least one second conductive-type channel-stopping body region 30 spreading from a surface of the virtual gate 24 to the buried channel 22. Further, there is provided at least one conductor 32 also coming into contact with the substrate 20, in order to come into contact with a surface of at least one channel-stopping body region 30 and supply majority carriers between the substrate 20 and the virtual gate 24.
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